PART |
Description |
Maker |
MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory 64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory Surface Mount Schottky Power Rectifier Plastic SOD?123 Package 18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited ONSEMI TI
|
AN8130FBP |
High Speed Low Power consumption Bi-COMS 10-Bit A/D convertor
|
Panasonic Semiconductor
|
KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位)8K的refresh/4k刷新
|
Hitachi,Ltd. Hitachi Semiconductor
|
23C6410 MX23C6410 MX23C6410MC-10 MX23C6410MC-12 MX |
64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
MB82DP04183C-65LWFKT |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|